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| Schottky Barrier Diodes (SBD) MA3J741 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 0.1 1.25 0.1 0.425 + 0.1 2.0 0.2 1.3 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 -55 to +125 Unit V V mA mA C C 0.9 0.1 1 : Anode 2 : NC 3 : Cathode EIAJ : SC-70 Flat S-Mini Type Package (3-pin) Marking Symbol: M1L Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1 Conditions Min Typ Max 300 0.4 1 Unit nA V V pF ns Detection efficiency 65 0.15 - 0.05 + 0.1 * S-mini type package (3-pin) of MA3X704A * Low forward rise voltage (VF) and satisfactory wave detection efficiency () * Small temperature coefficient of forward characteristic * Extremely low reverse current IR 0.3 - 0 I Features % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3J741 IF V F 103 Schottky Barrier Diodes (SBD) VF Ta 1.0 0.9 103 IR VR 102 75C 25C Ta = 125C - 20C Forward current IF (mA) 0.8 102 Forward voltage VF (V) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 mA IF = 30 mA 10 mA 10 Reverse current IR (A) Ta = 125C 10 75C 1 1 25C 10-1 10-1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 3 f = 1 MHz Ta = 25C IR T a 102 VR = 30 V 15 V Terminal capacitance Ct (pF) Reverse current IR (A) 0 5 10 15 20 25 30 10 2 1 1 10-1 0 10-2 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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